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High-electron-mobility transistor
A High-electron-mobility transistor (HEMT), also known as heterostructure FET (HFET) or modulation-doped FET (MODFET), is a field-effect transistor incorporating a junction between two materials with different band gaps (i.e. a heterojunction) as the channel instead of a doped region (as is generally the case for MOSFET). A commonly used material combination is GaAs with AlGaAs, though there is wide variation, dependent on the application of the device. Devices incorporating more indium generally show better high-frequency performance, while in recent years, gallium nitride HEMTs have attracted attention due to their high-power performance. HEMT transistors are able to operate at higher frequencies than ordinary transistors, up to millimeter wave frequencies, and are used in high-frequency products such as cell phones, satellite television receivers, voltage converters, and radar equipment.
== Invention ==
The invention of the HEMT is usually attributed to Takashi Mimura (三村 高志) (Fujitsu, Japan).〔Takashi Mimura: 'The Early History of the High Electron Mobility Transistor (HEMT)',IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 50, NO. 3, MARCH 2002,.〕 In America, Ray Dingle and his co-workers in Bell Laboratories also played an important role in the invention of the HEMT. Daniel Delagebeaudeuf and Trong Linh Nuyen from Thomson-CSF (France) filed for a patent of this device in March 1979〔 (google patents link )〕
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